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The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com
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Cautions
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H7N0307AB
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1568A (Z) 2nd. Edition Aug. 2002 Features
* Low on-resistance * RDS(on) = 4.6 m typ. * Low drive current * 4.5 V gate drive device can be driven from 5 V source
Outline
TO-220AB
D
G
S
1 2 3
1. Gate 2. Drain (Frange) 3. Source
H7N0307AB
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to Case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID ID(pulse) IDR Pch
Note 2 Note 1
Ratings 30 20 60 240 60 90 1.39 150 -55 to +150
Unit V V A A A W C/W C C
ch-c Tch Tstg
Rev.1, Aug. 2002, page 2 of 2
H7N0307AB
Electrical Characteristics
(Ta = 25C)
Item Symbol Min 30 20 -- -- 1.0 -- -- |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF 40 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 4.6 8.0 65 2500 650 350 40 7 8 20 300 70 20 0.92 60 Max -- -- 10 10 2.5 5.8 11.5 -- -- -- -- -- -- -- -- -- -- -- -- -- A A V m m S pF pF pF nc nc nc ns ns ns ns V ns IF = 60 A, VGS = 0 IF = 60 A, VGS = 0 diF/ dt = 50 A/s Unit V Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 30 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 30 A, VGS = 10 V ID = 30 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 10 V ID = 60 A VGS = 10 V, ID = 30 A RL =0.33 Rg = 4.7 ID = 30 A, VGS = 4.5 V
Note 1 Note 1 Note 1
Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage V(BR)GSS IGSS IDSS VGS(off) RDS(on)
Note 1
Body-drain diode reverse recovery trr time Notes: 1. Pulse test
Rev.1, Aug. 2002, page 3 of 3
H7N0307AB
Main Characteristics
Power vs. Temperature Derating 160
Pch (W) I D (A)
Maximum Safe Operation Area 500 100
DC Op
10
120
1 m 100 s s
era PW tio n =1
s
10
Channel Dissipation
Drain Current
80
0m s
1
40
0.1
Operation in this area is limited by R DS(on) Tc = 25C 1 shot Pulse
0
50
100
150 Tc (C)
200
Case Temperature
0.01 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V)
Typical Output Characteristics 50 10V 3.5 V
I D (A) (A)
Typical Transfer Characteristics 50 V DS = 10 V Pulse Test 40
40
4.5 V
Pulse Test
30
ID Drain Current
30 25C Tc = 75C -25C
Drain Current
20 3V 10
VGS = 2.5 V
20
10
0
2 4 6 Drain to Source Voltage
8 10 V DS (V)
0
1 2 3 Gate to Source Voltage
5 4 V GS (V)
Rev.1, Aug. 2002, page 4 of 4
H7N0307AB
Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 20 10 5 10 V 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 Drain Current I D (A) VGS = 4.5 V
V DS(on) (V)
Pulse Test
0.16
Drain to Source Voltage
0.12
0.08 I D = 10 A 5A 2A 0 4 8 12 Gate to Source Voltage 16 20 V GS (V)
0.04
Static Drain to Source on State Resistance RDS(on) (m )
Pulse Test 16 I D = 2 A, 5 A, 10 A 12 V GS = 4.5 V 8 2 A, 5 A, 10 A 10 V 0 -40 0 40 80 120 160 Case Temperature Tc (C)
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance vs. Temperature 20
Drain to Source On State Resistance R DS(on) (m )
0.20
Forward Transfer Admittance vs. Drain Current 100 30 10 25C 3 1 0.3 0.1 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 100 Tc = -25C 75C
4
Drain Current ID (A)
Rev.1, Aug. 2002, page 5 of 5
H7N0307AB
Body-Drain Diode Reverse Recovery Time 1000
Reverse Recovery Time trr (ns)
Typical Capacitance vs. Drain to Source Voltage 10000 3000 1000 Coss 300 Crss 100 30 10 0 10 20 30 VGS = 0 f = 1 MHz 40 50 Ciss
200 100 50 20 10 0.1 di / dt = 50 A / s V GS = 0, Ta = 25C 0.3 1 3 10 30 100 Reverse Drain Current I DR (A)
Capacitance C (pF)
500
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
V DS (V)
50
V GS 16 V DD = 25 V 10 V 12 5V 8
V GS (V)
I D = 60 A
20
500
Switching Characteristics
Switching Time t (ns)
40
200 100 50 t d(on) tf 10 t d(off)
tr
Drain to Source Voltage
30
V DS
20
Gate to Source Voltage
20
10
V DD = 25 V 10 V 5V 20 40 60 80 Gate Charge Qg (nc)
4 0 100
0
5 2 5 10 20 0.1 0.2 0.5 1 Drain Current I D (A)
V GS = 10 V , VDS = 10 V Rg = 4.7 , duty < 1 % 50 100
Rev.1, Aug. 2002, page 6 of 6
H7N0307AB
Reverse Drain Current vs. Souece to Drain Voltage 100
Reverse Drain Current I DR (A)
80 10 V 60 5V V GS = 0
40
20 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width 3
Normalized Transient Thermal Impedance s (t)
Tc = 25C 1 D=1 0.5
0.2
0.3
0.1
0.1
0.05 0.02 e 1 0.0 puls t ho 1s
ch - c(t) = s (t) * ch - c ch - c = 1.38C/ W, Tc = 25C
PDM PW T
0.03
D=
PW T
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width PW (s)
Rev.1, Aug. 2002, page 7 of 7
H7N0307AB
Switching Time Test Circuit Vin Monitor Rg D.U.T. RL Vin Vin 10 V V DS = 10 V Vout 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Monitor Switching Time Waveform 90%
Rev.1, Aug. 2002, page 8 of 8
H7N0307AB
Package Dimensions
As of January, 2002
Unit: mm
11.5 MAX
2.79 0.2
10.16 0.2 9.5 8.0 3.6 -0.08
+0.2 -0.1
4.44 0.2
+0.1
1.26 0.15
6.4
18.5 0.5
15.0 0.3
1.27
2.7 MAX
14.0 0.5
1.5 MAX
7.8 0.5
0.76 0.1
2.54 0.5
2.54 0.5
0.5 0.1
Hitachi Code JEDEC JEITA Mass (reference value)
TO-220AB Conforms Conforms 1.8 g
Rev.1, Aug. 2002, page 9 of 9
H7N0307AB
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Sales Offices
Hitachi, Ltd.
Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109
URL
http://www.hitachisemiconductor.com/
For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-6538-6533/6538-8577 Fax : <65>-6538-6933/6538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk
Copyright (c) Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 6.0
Rev.1, Aug. 2002, page 10 of 10

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